TGS2355

Qorvo
772-TGS2355
TGS2355

Mfr.:

Description:
RF Switch ICs .5-6GHz SPDT 100 Watt GaN

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 50   Multiples: 50
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
159,58 € 7.979,00 €
100 Quote

Alternative Packaging

Mfr. Part No.:
TGS2355-SM
Packaging:
Tray
Availability:
In Stock
Price:
231,83 €
Min:
1

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Switch ICs
RoHS:  
SPDT
500 MHz
6 GHz
1.3 dB
40 dB
- 55 C
+ 150 C
SMD/SMT
Die
Si
TGS2355
Gel Pack
Brand: Qorvo
High Control Voltage: - 48 V
Number of Switches: Single
Operating Supply Current: 1 mA
Pd - Power Dissipation: 36.8 W
Product Type: RF Switch ICs
Factory Pack Quantity: 50
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: 1097157
Unit Weight: 1 g
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5-0810-13

Datasheet

PCN

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TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399901
ECCN:
EAR99

TGS2355 High Power GaN Switch

Qorvo TGS2355 High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). Operating from 0.5GHz to 6.0GHz, the TGS2355 provides up to 100W input power handling with <1dB insertion over most of the operating band and greater than 40dB isolation.

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
Learn More

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

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