STD45P4LLF6AG

STMicroelectronics
511-STD45P4LLF6AG
STD45P4LLF6AG

Mfr.:

Description:
MOSFETs Automotive-grade P-channel -40 V, 12 mOhm typ., -50 A STripFET F6 Power MOSFET i

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,63 € 1,63 €
1,04 € 10,40 €
0,699 € 69,90 €
0,554 € 277,00 €
0,513 € 513,00 €
Full Reel (Order in multiples of 2500)
0,48 € 1.200,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
P-Channel
1 Channel
40 V
50 A
15 mOhms
- 20 V, 20 V
1 V
65.5 nC
- 55 C
+ 150 C
58 W
Enhancement
AEC-Q101
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Fall Time: 31 ns
Product Type: MOSFETs
Rise Time: 35.5 ns
Series: STD45P4LLF6AG
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 P-Channel Power MOSFET
Typical Turn-Off Delay Time: 63.5 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 330 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

H6/F6 Automotive P-Channel MOSFETs

STMicroelectronics H6/F6 Automotive P-Channel MOSFETs are developed using the STMicroelectronics STripFET™ H6/F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.