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SIHP080N60E-GE3

Name: Vishay SIHP080N60E-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHP080N60E-GE3
Price: 4.59 EUR
Availability: InStock

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Mouser No:

78-SIHP080N60E-GE3

Mfr. No:

SIHP080N60E-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs TO220 600V 35A N-CH MOSFET

Datasheet:

SIHP080N60E-GE3 Datasheet

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In Stock: 6.655

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,59 €	4,59 €
	3,05 €	30,50 €
	2,48 €	248,00 €
	2,20 €	1.100,00 €
	1,87 €	1.870,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	35 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	227 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Product Type:	MOSFETs
Rise Time:	96 ns
Series:	SIHP E
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns
Unit Weight:	2 g

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Datasheet

SIHP080N60E-GE3 Datasheet

Technical Resources

TO-220-1

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiHP080N60E E Series Power MOSFETs

Vishay / Siliconix SiHP080N60E E Series Power MOSFETs offer 4th generation E series technology in a TO-220AB package. The SiHP080N60E features a low figure-of-merit (FOM) R_on x Q_g and a low effective capacitance (C_o(er)). The Vishay / Siliconix SiHP080N60E E Series Power MOSFETs are designed for Server and telecom, SMPS, and PFC power supply applications.