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SQS660CENW-T1_GE3

Name: Vishay SQS660CENW-T1_GE3
Brand: Vishay / Siliconix
SKU: 78-SQS660CENW-T1_GE3
Price: 1.3 EUR
Availability: InStock

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Mouser No:

78-SQS660CENW-T1_GE3

Mfr. No:

SQS660CENW-T1_GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET

Datasheet:

SQS660CENW-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SQS660CENW-T1_GE3

In Stock: 60.078

Stock:: 60.078 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,30 €	1,30 €
	0,809 €	8,09 €
	0,528 €	52,80 €
	0,406 €	203,00 €
	0,393 €	393,00 €
Full Reel (Order in multiples of 3000)
	0,335 €	1.005,00 €
	0,314 €	1.884,00 €
	0,304 €	2.736,00 €
	0,294 €	7.056,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8W
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	11.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	17.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62.5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Forward Transconductance - Min:	26 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	SQS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

SQS660CENW-T1_GE3 Datasheet

Models

R-C Thermal Model Parameters

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SQS660CENW Automotive N-Ch 60V MOSFET

Vishay / Siliconix SQS660CENW Automotive N-Ch 60V MOSFET is an AEC-Q101 qualified TrenchFET^® power MOSFET. The SQS660CENW is specified at 18A I_D and 60V V_DS. The single configuration device is offered in a PowerPAK^® 1212-8W package with an operating junction and storage temperature range of -55°C to +175°C.