Automotive MDmesh V Power MOSFET

STMicroelectronics Automotive MDmesh™ V Power MOSFET is the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package. The 650V rating provides a greater safety margin when exposed to high-voltage spikes, enhancing the reliability of automotive power and control modules. This device offers extremely low on-resistance (RDS(on)) as low as 0.032Ω, combined with the compact TO-247 outline, enhances system energy efficiency and power density. Gate charge (Qg) and input capacitance are also low, resulting in an outstanding Qg x RDS(on) figure of merit (FOM) with high switching performance and efficiency.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging

STMicroelectronics MOSFETs N-Ch 650 V 0.033 Ohm 69 A MDmesh(TM)
Datasheet
23In Stock
267On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 69 A 24 mOhms - 25 V, 25 V 4 V 203 nC - 55 C + 150 C 450 W Enhancement AEC-Q100 MDmesh Tube

STMicroelectronics MOSFETs N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5
Datasheet
1.200Expected 3/9/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 710 V 46 A 41 mOhms - 25 V, 25 V 4 V 142 nC - 55 C + 150 C 330 W Enhancement AEC-Q101 MDmesh Tube