LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

Results: 2
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package/Case
Packaging
STMicroelectronics RF MOSFET Transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
Datasheet
Non-Stocked
Min.: 100
Mult.: 100
Reel: 100

N-Channel Si 2.5 A 28 V 1 Ohms 945 MHz 16 dB 150 W + 200 C Through Hole LBB-4 Reel
STMicroelectronics RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1

N-Channel Si 9 A 90 V 1.5 GHz + 200 C SMD/SMT M243-3 Bulk