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SCT3030ARC15

Name: ROHM Semiconductor SCT3030ARC15
Brand: ROHM Semiconductor
SKU: 755-SCT3030ARC15
Price: 18.89 EUR
Availability: OutOfStock

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Mouser No:

755-SCT3030ARC15

Mfr. No:

SCT3030ARC15

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO247 650V 70A N-CH SIC

Datasheet:

SCT3030ARC15 Datasheet

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	18,89 €	18,89 €
	15,45 €	154,50 €
	13,66 €	1.366,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	104 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	262 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	25 ns
Forward Transconductance - Min:	9.4 S
Packaging:	Tube
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	26 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	6 ns

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Datasheet

SCT3030ARC15 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.