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NTBS9D0N10MC

Name: onsemi NTBS9D0N10MC
Brand: onsemi
SKU: 863-NTBS9D0N10MC
Price: 3.11 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-NTBS9D0N10MC

Mfr. No:

NTBS9D0N10MC

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V 9.0MOHM D2PAK-3L

Datasheet:

NTBS9D0N10MC Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBS9D0N10MC

In Stock: 5.300

Stock:: 5.300 Can Dispatch Immediately

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Factory Lead Time:: 50 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,11 €	3,11 €
	2,03 €	20,30 €
	1,42 €	142,00 €
Full Reel (Order in multiples of 800)
	1,06 €	848,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTBS9D0N10MC
Factory Pack Quantity:	800
Subcategory:	Transistors
Unit Weight:	360 mg

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Datasheet

NTBS9D0N10MC Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NTBS9D0N10MC Single N-Channel MOSFET

onsemi NTBS9D0N10MC Single N-Channel MOSFET offers low drain-to-source ON-resistance R_DS(ON) that minimizes conduction losses. This MOSFET provides low total gate charge (Q_G) and capacitance that minimizes driver losses. onsemi NTBS9D0N10MC MOSFET lowers switching noise/electromagnetic interference (EMI). This MOSFET features 100V drain-to-source voltage (V_DSS) and 60A maximum continuous drain current (I_D). Typical applications include power tools, battery-operated vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, battery management systems (BMS)/storage, and home automation.