IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module
Datasheet
17In Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 2300 V, 1800 A dual IGBT module
Datasheet
2In Stock
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module
Datasheet
33In Stock
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module
Datasheet
10In Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module
Datasheet
24In Stock
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 300 A dual IGBT module
Datasheet
13In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.5 V 300 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module
Datasheet
6Expected 7/3/2026
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.5 V 890 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules PP IHM I
Datasheet
Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Tray
Infineon Technologies IGBT Modules 1200 V, 750 A dual IGBT module
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 10
Mult.: 10

IGBT Silicon Modules Dual 1.2 kV 1.5 V 750 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1700 V, 750 A dual IGBT module
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.7 kV 1.7 V 750 A 100 nA - 40 C + 175 C Tray