AFV10700GSR5

NXP Semiconductors
771-AFV10700GSR5
AFV10700GSR5

Mfr.:

Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
10 Weeks Estimated factory production time.
Minimum: 50   Multiples: 50
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 50)
691,65 € 34.582,50 €

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
2.6 A
105 V
1.03 GHz to 1.09 GHz
19.2 dB
700 W
- 55 C
+ 150 C
SMD/SMT
NI-780GS-4L
Reel
Brand: NXP Semiconductors
Number of Channels: 2 Channel
Pd - Power Dissipation: 526 W
Product Type: RF MOSFET Transistors
Series: AFV10700
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
Part # Aliases: 935362013178
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Attributes selected: 0

Datasheet

PCN

TARIC:
8541290000
USHTS:
8541290055
ECCN:
EAR99

AFV10700H RF Power LDMOS Transistor

NXP Semiconductors AFV10700H RF Power LDMOS Transistor is designed for pulse applications operating at 1030MHz to 1090MHz. This LDMOS Transistor can also be used over the 960MHz to 1215MHz band at reduced power. This device is suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME, and other complex pulse chains.

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