It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STP80N1K1K6

Name: STMicroelectronics STP80N1K1K6
Brand: STMicroelectronics
SKU: 511-STP80N1K1K6
Price: 2.05 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STP80N1K1K6

Mfr. No:

STP80N1K1K6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET

Complete Your Design

Datasheet:

STP80N1K1K6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STP80N1K1K6

In Stock: 1.062

Stock:: 1.062 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,05 €	2,05 €
	1,32 €	13,20 €
	0,903 €	90,30 €
	0,719 €	359,50 €
	0,674 €	674,00 €
	0,612 €	1.224,00 €
	0,598 €	2.990,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STP80N1K1K6 Datasheet (PDF)

PCN

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

STP80N1K1K6 N-Channel Power MOSFET

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology. The STMicroelectronics STP80N1K1K6 MOSFET offers top-notch on-resistance per area and gate charge. The device is ideal for high-power density and efficient applications.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.