QPD1029L

Qorvo
772-QPD1029L
QPD1029L

Mfr.:

Description:
GaN FETs 1.2-1.4GHz,1500W,65V,GaN RF I/P-Mtchd Tr

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Qorvo QPD1029L

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 18   Multiples: 18
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
1.808,94 € 32.560,92 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Brand: Qorvo
Maximum Operating Frequency: 1.4 GHz
Minimum Operating Frequency: 1.2 GHz
Moisture Sensitive: Yes
Output Power: 1.5 kW
Packaging: Waffle
Product Type: GaN FETs
Series: QPD1029L
Factory Pack Quantity: 18
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

USHTS:
8541497080
ECCN:
EAR99

QPD1029L GaN RF IMFET Transistor

Qorvo QPD1029L GaN RF Internally Matched FET (IMFET) Transistor is a 1500W (P3dB) discrete GaN on SiC High Electron Mobility Transistor (HEMT). This RF IMFET operates between a 1.2GHz to 1.4GHz frequency range. The QPD1029L transistor provides ease of external board match and saves board space. This Qorvo transistor is a RoHS-compliant device. The QPD1029L IMFET transistor device is used in an industry-standard air cavity package and is ideally suited for radar.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.