OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimised for synchronous rectification.

Results: 81
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs MOSFET_(20V 40V)
9.920On Order
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 120 A 600 uOhms - 20 V, 20 V 3 V 116 nC - 55 C + 175 C 187 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFET_(20V 40V)
2.000On Order
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT PG-LHDSO-10-3 N-Channel 40 V 390 A 750 uOhms 20 V 3 V 100 nC - 55 C + 175 C 206 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in TO-220
500Expected 3/12/2026
Min.: 1
Mult.: 1

Si OptiMOS Tube
Infineon Technologies MOSFETs IFX FET >150 - 400V
2.000Expected 2/26/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 136 A 6.9 mOhms - 20 V, 20 V 3.7 V 73 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs OptiMOS 6 power MOSFET 150 V normal level in TOLL package
1.916Expected 3/5/2026
Min.: 1
Mult.: 1
Reel: 2.000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 150 V 147 A 4.4 mOhms 20 V 4 V 51 nC - 55 C + 175 C 234 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 40V
10.000Expected 2/5/2027
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT N-Channel 1 Channel 40 V 232 A 1.2 mOhms - 20 V, 20 V 2.8 V 51 nC - 55 C + 175 C 125 W Enhancement Reel, Cut Tape, MouseReel