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SIR680ADP-T1-RE3

Name: Vishay SIR680ADP-T1-RE3
Brand: Vishay Semiconductors
SKU: 78-SIR680ADP-T1-RE3
Price: 2.69 EUR
Availability: InStock

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Mouser No:

78-SIR680ADP-T1-RE3

Mfr. No:

SIR680ADP-T1-RE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 80V PowerPAK SO-8

Datasheet:

SIR680ADP-T1-RE3 Datasheet

ECAD Model:

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In Stock: 6.062

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,69 €	2,69 €
	1,75 €	17,50 €
	1,21 €	121,00 €
	1,01 €	505,00 €
Full Reel (Order in multiples of 3000)
	0,86 €	2.580,00 €
	0,842 €	7.578,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	125 A
Rds On - Drain-Source Resistance:	2.88 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	43 nC, 55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	9 ns, 12 ns
Forward Transconductance - Min:	68 S
Product Type:	MOSFETs
Rise Time:	8 ns, 15 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	N - Channel
Typical Turn-Off Delay Time:	30 ns, 30 ns
Typical Turn-On Delay Time:	17 ns, 19 ns
Unit Weight:	506,600 mg

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Datasheet

SIR680ADP-T1-RE3 Datasheet

Application Notes

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

SiR680ADP N-Channel (D-S) MOSFET

Vishay SiR680ADP N-Channel (D-S) MOSFET is a TrenchFET^® Gen IV power MOSFET featuring low R_DS - Q_g Figure Of Merit (FOM). This MOSFET is tuned for the lowest R_DS to Q_oss FOM and 100% R_g and UIS tested. The SiR680ADP MOSFET operates within a -55°C to +150°C temperature range. This MOSFET features an 80V drain-source voltage, ±20V gate-source voltage, and 125A pulse drain current. The SiR680ADP MOSFET comes in a PowerPAK SO-8 package. This MOSFET is ideal for synchronous rectification of primary side switches, DC/DC converters, OR-ing, power supplies, and motor drive control.