SH63N65DM6AG

STMicroelectronics
511-SH63N65DM6AG
SH63N65DM6AG

Mfr.:

Description:
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET

ECAD Model:
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In Stock: 195

Stock:
195 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 200)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
18,89 € 18,89 €
14,96 € 149,60 €
10,84 € 1.084,00 €
Full Reel (Order in multiples of 200)
10,84 € 2.168,00 €
9,39 € 3.756,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
ACEPACK SMIT-9
N-Channel
2 Channel
650 V
53 A
64 mOhms
- 25 V, 25 V
4.75 V
80 nC
- 55 C
+ 150 C
424 W
Enhancement
AQG 324
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Dual
Fall Time: 8 ns
Moisture Sensitive: Yes
Product Type: MOSFETs
Rise Time: 8 ns
Factory Pack Quantity: 200
Subcategory: Transistors
Typical Turn-Off Delay Time: 68 ns
Typical Turn-On Delay Time: 28 ns
Unit Weight: 8,200 g
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SH63N65DM6AG Power MOSFET

STMicroelectronics SH63N65DM6AG Power MOSFET is an automotive-grade N-channel MDmesh DM6 half‑bridge topology power MOSFET offering 650V blocking voltage. This power MOSFET is AQG 324 qualified and comes in an ACEPACK SMIT low inductance package. The SH63N65DM6AG power MOSFET features very low switching energies, low thermal resistance, and a 3.4kVrms/min isolation rating. This power MOSFET has a dice-on Direct Bond Copper (DBC) substrate that helps the package offer low thermal resistance coupled with an isolated top-side thermal pad. The SH63N65DM6AG MOSFET comes in a package with high design flexibility enabling several configurations, including phase-legs, boost, and single-switch through different combinations of internal power switches. This power MOSFET is ideal for switching applications.