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SI4056ADY-T1-GE3

Name: Vishay SI4056ADY-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SI4056ADY-T1-GE3
Price: 1.09 EUR
Availability: InStock

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Mouser No:

78-SI4056ADY-T1-GE3

Mfr. No:

SI4056ADY-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs SOT669 100V 8.3A N-CH MOSFET

Datasheet:

SI4056ADY-T1-GE3 Datasheet

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In Stock: 126.952

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,09 €	1,09 €
	0,685 €	6,85 €
	0,452 €	45,20 €
	0,352 €	176,00 €
	0,32 €	320,00 €
Full Reel (Order in multiples of 2500)
	0,284 €	710,00 €
	0,277 €	1.385,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	8.3 A
Rds On - Drain-Source Resistance:	29.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	19.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	5 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Fall Time:	4 ns
Forward Transconductance - Min:	49 S
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	750 mg

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Datasheet

SI4056ADY-T1-GE3 Datasheet

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Si4056ADY N-Channel MOSFET

Vishay / Siliconix Si4056ADY N-Channel MOSFET comes in a SO-8 package with a 100V drain-source voltage rating and 40A pulsed drain current. The MOSFET features a low R_DS x Q_g figure-of-merit (FOM) tuned for the lowest R_DS x Q_oss FOM. Vishay Si4056ADY N-Channel MOSFET is ideally suited for primary-side switches, LED drivers, load switches, and synchronous rectification applications.

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.