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VSMY1850

Name: Vishay VSMY1850
Brand: Vishay Semiconductors
SKU: 782-VSMY1850
Price: 1.04 EUR
Availability: InStock

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Mouser No:

782-VSMY1850

Mfr. No:

VSMY1850

Mfr.:

Vishay Semiconductors

Description:

Infrared Emitters SurflightVCSEL 850nm 10mW/sr, +/-60deg.

Datasheet:

VSMY1850 Datasheet

ECAD Model:

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More Information

Learn more about Vishay Semiconductors VSMY1850

In Stock: 6.067

Stock:: 6.067 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,04 €	1,04 €
	0,727 €	7,27 €
	0,54 €	54,00 €
	0,458 €	229,00 €
	0,431 €	431,00 €
Full Reel (Order in multiples of 3000)
	0,359 €	1.077,00 €
	0,348 €	2.088,00 €
	0,331 €	2.979,00 €
	0,326 €	7.824,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	Infrared Emitters
RoHS:
Mounting Style:	SMD/SMT
Wavelength:	850 nm
Radiant Intensity:	85 mW/sr
Beam Angle:	60 deg
If - Forward Current:	100 mA
Vf - Forward Voltage:	2.9 V
Power Rating:	50 mW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Fall Time:	10 ns
Illumination Colour:	Infrared
Lens Shape:	Rectangular
Moisture Sensitive:	Yes
Product Type:	IR Emitters (IR LEDs)
Rise Time:	10 ns
Factory Pack Quantity:	3000
Subcategory:	Infrared Data Communications
Tradename:	SurfLight
Unit Weight:	85 mg

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Attributes selected: 0

Filter Document:

TARIC:: 8541410000
CAHTS:: 8541410000
USHTS:: 8541410000
JPHTS:: 854141000
MXHTS:: 8541410100
BRHTS:: 85414011
ECCN:: EAR99

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

VSMY1850 High-Speed IR Emitting Diodes

Vishay Semiconductors VSMY1850 High-Speed IR Emitting Diodes provide a peak wavelength of 850nm based on GaAlAs surface emitter chip technology. These diodes feature high radiant intensity, high speed, and high optical power. The VSMY1850 modules are molded in clear and untinted 0805 plastic packages for surface mounting. Vishay Semiconductors VSMY1850 High-Speed IR Emitting Diodes are well-suited for applications such as IrDA-compatible data transmissions, miniature light barriers, photo interrupters, optical switches, 3D TVs, and more.

VSMY High Speed IR Emitting Diodes

Vishay Semiconductors VSMY High Speed IR Emitting Diodes are infrared, 850nm-emitting diodes based on surface emitter technology with high radiant intensity, high optical power, and high speed. Vishay Semiconductors VSMY Series High-Speed IR Emitting Diodes come in four package forms, the PLCC-2, Gull Wing, Reverse Gull Wing, and 0805, all but the first of which are molded in clear, untinted plastic packages. All of these diodes are designed for surface mounting and are suitable for high pulse current operation.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.