UF3SC120009K4S

onsemi
431-UF3SC120009K4S
UF3SC120009K4S

Mfr.:

Description:
SiC MOSFETs 1200V/9MOSICFETG3TO247

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi UF3SC120009K4S

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
1 Channel
1.2 kV
120 A
11 mOhms
- 20 V, + 20 V
4 V
234 nC
- 55 C
+ 175 C
789 W
Enhancement
AEC-Q101
SiC FET
Brand: onsemi
Configuration: Single
Packaging: Tube
Product Type: SiC MOSFETS
Series: UF3SC
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Polarity: N-Channel
Unit Weight: 6 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Philippines
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low RDS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.

In Stock: 378

Stock:
378 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
61,44 € 61,44 €
600 Quote

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.