TK170V65Z,LQ

Toshiba
757-TK170V65ZLQ
TK170V65Z,LQ

Mfr.:

Description:
MOSFETs MOSFET 650V 170mOhms DTMOS-VI

ECAD Model:
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In Stock: 4.720

Stock:
4.720 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 4720 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
4,03 € 4,03 €
2,73 € 27,30 €
2,22 € 222,00 €
2,16 € 1.080,00 €
1,96 € 1.960,00 €
Full Reel (Order in multiples of 2500)
1,83 € 4.575,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-8
N-Channel
1 Channel
650 V
18 A
170 mOhms
- 30 V, 30 V
4 V
29 nC
- 55 C
+ 150 C
150 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 16 ns
Series: DTMOS VI
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 37 ns
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.