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TK063N60Z1,S1F

Name: Toshiba TK063N60Z1,S1F
Brand: Toshiba
SKU: 757-TK063N60Z1S1F
Price: 5.69 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK063N60Z1S1F

Mfr. No:

TK063N60Z1,S1F

Mfr.:

Toshiba

Description:

MOSFETs N-ch MOSFET, 600 V, 0.063 ohma.10V, TO-247, DTMOS?

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK063N60Z1,S1F Datasheet

ECAD Model:

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More Information

Learn more about Toshiba TK063N60Z1,S1F

In Stock: 73

Stock:: 73 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,69 €	5,69 €
	4,29 €	42,90 €
	2,73 €	327,60 €
	2,48 €	1.264,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	37 A
Rds On - Drain-Source Resistance:	63 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	56 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	242 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	50 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	105 ns
Typical Turn-On Delay Time:	84 ns

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Datasheet

TK063N60Z1,S1F Datasheet

Application Notes

Models

Product Catalogs

Selection Guide 2025 - MOSFETs

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.