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SSM6J511NU,LF

Name: Toshiba SSM6J511NU,LF
Brand: Toshiba
SKU: 757-SSM6J511NULF
Price: 0.53 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-SSM6J511NULF

Mfr. No:

SSM6J511NU,LF

Mfr.:

Toshiba

Description:

MOSFETs Small-signal MOSFET Power MGMT switch

Datasheet:

SSM6J511NU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6J511NU,LF

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 17.054

Expected 2/23/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,533 €	0,53 €
	0,329 €	3,29 €
	0,211 €	21,10 €
	0,159 €	79,50 €
	0,142 €	142,00 €
Full Reel (Order in multiples of 3000)
	0,117 €	351,00 €
	0,107 €	642,00 €
	0,092 €	828,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	47 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Tradename:	U-MOSVII
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Forward Transconductance - Min:	27 S
Product Type:	MOSFETs
Series:	SSM6J511
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Unit Weight:	8,500 mg

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Datasheet

SSM6J511NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII MOSFETs

Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.