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QH8ME5TCR

Name: ROHM Semiconductor QH8ME5TCR
Brand: ROHM Semiconductor
SKU: 755-QH8ME5TCR
Price: 1.03 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-QH8ME5TCR

Mfr. No:

QH8ME5TCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs 100V 2A, Dual Nch+Pch, TSMT8, Power MOSFET

Datasheet:

QH8ME5TCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor QH8ME5TCR

In Stock: 2.745

Stock:: 2.745 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,03 €	1,03 €
	0,648 €	6,48 €
	0,409 €	40,90 €
	0,331 €	165,50 €
	0,301 €	301,00 €
Full Reel (Order in multiples of 3000)
	0,261 €	783,00 €
	0,242 €	1.452,00 €
	0,231 €	2.079,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSMT-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	202 mOhms, 270 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	2.8 nC, 19.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	5 ns, 48 ns
Forward Transconductance - Min:	1.3 S, 3.2 S
Product Type:	MOSFETs
Rise Time:	6 ns, 7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	15 ns, 105 ns
Typical Turn-On Delay Time:	6 ns, 7.3 ns

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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