It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMYS8D0N04CTWG

Name: onsemi NVMYS8D0N04CTWG
Brand: onsemi
SKU: 863-NVMYS8D0N04CTWG
Price: 1.31 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVMYS8D0N04CTWG

Mfr. No:

NVMYS8D0N04CTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 8.0 mOhm 48A Single N-Channel

Datasheet:

NVMYS8D0N04CTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMYS8D0N04CTWG

In Stock: 9.949

Stock:: 9.949 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,31 €	1,31 €
	0,808 €	8,08 €
	0,538 €	53,80 €
	0,421 €	210,50 €
	0,384 €	384,00 €
Full Reel (Order in multiples of 3000)
	0,356 €	1.068,00 €
	0,343 €	2.058,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	8.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	38 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	6 ns
Forward Transconductance - Min:	29 S
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	NVMYS8D0N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	75 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMYS8D0N04CTWG Datasheet

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.