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NTTFS5D9N08HTWG

Name: onsemi NTTFS5D9N08HTWG
Brand: onsemi
SKU: 863-NTTFS5D9N08HTWG
Price: 1.67 EUR
Availability: InStock

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Mouser No:

863-NTTFS5D9N08HTWG

Mfr. No:

NTTFS5D9N08HTWG

Mfr.:

onsemi

Description:

MOSFETs T8 80V DFN POWER CLIP 3X3

Datasheet:

NTTFS5D9N08HTWG Datasheet

ECAD Model:

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In Stock: 5.810

Stock:: 5.810 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,67 €	1,67 €
	1,17 €	11,70 €
	0,92 €	92,00 €
	0,82 €	410,00 €
	0,796 €	796,00 €
Full Reel (Order in multiples of 3000)
	0,723 €	2.169,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WDFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	84 A
Rds On - Drain-Source Resistance:	5.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTTFS5D9N08H
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NTTFS5D9N08HTWG Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs

onsemi NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs employ high-performance Shielded Gate MOSFET technology for extremely low R_DS(on). These onsemi single-channel MOSFETs offer low switching noises/EMI and 100% UIL-tested MSL1 robust package design. The NTTFSxD1N0xHL MOSFETs are available in a lead-free, halogen-free/BFR-free, and RoHS compliant WDFN8 package. Typical applications include DC−DC buck converters, point of load, high-efficiency load switch and low-side switching, ORing FETs, DC-DC power supplies, and MV synchronous buck converters.