NTMFS1D3N04XMT1G

onsemi
863-NTMFS1D3N04XMT1G
NTMFS1D3N04XMT1G

Mfr.:

Description:
MOSFETs 40V T10M IN S08FL PACKAGE

ECAD Model:
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In Stock: 6.718

Stock:
6.718 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,66 € 1,66 €
1,20 € 12,00 €
0,824 € 82,40 €
0,673 € 336,50 €
Full Reel (Order in multiples of 1500)
0,63 € 945,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DFN-5
N-Channel
1 Channel
40 V
195 A
1.3 mOhms
- 20 V, 20 V
3.5 V
38.5 nC
- 55 C
+ 175 C
90 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 5.47 ns
Forward Transconductance - Min: 105 S
Product Type: MOSFETs
Rise Time: 6.27 nC
Series: NTMFS1D3N04XM
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 29.2 ns
Typical Turn-On Delay Time: 20 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.