MAPC-A3006-AB000

MACOM
937-MAPC-A3006-AB000
MAPC-A3006-AB000

Mfr.:

Description:
GaN FETs Transistor,GaN,10W,DC-6GHz,3.6mm,Flange

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about MACOM MAPC-A3006-AB000

In Stock: 60

Stock:
60 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
126,02 € 126,02 €
105,31 € 1.053,10 €
96,67 € 9.667,00 €

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
SMD/SMT
84 V
4.6 A
- 10 V,+ 2 V
- 40 C
+ 85 C
Brand: MACOM
Gain: 12.5 dB
Maximum Operating Frequency: 8 GHz
Minimum Operating Frequency: 0 Hz
Output Power: 42.3 dBm
Product: GaN FETs
Product Type: GaN FETs
Factory Pack Quantity: 1
Subcategory: Transistors
Type: GaN on SiC Transistor
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Attributes selected: 0

Datasheet

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Compliance Codes
USHTS:
8541290055
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

GaN on SiC Transistors

MACOM GaN on SiC Transistors are next-generation RF power transistors that deliver industry-leading gain, efficiency, and power in the same compact footprint. These transistors feature 28V operating voltage, up to 8GHz frequency, high efficiency, and high breakdown voltage. The GaN on SiC transistors support high power, gain, and efficiency, while keeping the same footprint, versus previous generations. These transistors are 100% pass-biased JEDEC HAST (JESD22-A110E) and pass-Highly Accelerated Temperature and Humidity Stress Test (HAST). The GaN on SiC transistors are ideal for 2-way private radio, broadband amplifiers, cellular infrastructure, test instrumentation, and general amplification.

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