KTDM4G4B826BGIEAT

SMARTsemi
473-M4G4B826BGIEAT
KTDM4G4B826BGIEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 512MX8 2666Mbps 1.2V 78-FBGA Industrial

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about SMARTsemi KTDM4G4B826BGIEAT

In Stock: 162

Stock:
162 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,26 € 9,26 €
8,97 € 89,70 €
7,66 € 1.608,60 €
7,47 € 3.137,40 €
7,41 € 7.780,50 €

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
8 bit
1.333 GHz
FBGA-78
512 M x 8
1.14 V
1.26 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 210
Subcategory: Memory & Data Storage
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.