IS66WVE1M16EBLL-70BLI

Name: ISSI IS66WVE1M16EBLL-70BLI
Brand: ISSI
SKU: 870-66E1M16EBLL70BLI
Price: 6.54 EUR
Availability: InStock

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Mouser No:

870-66E1M16EBLL70BLI

Mfr. No:

IS66WVE1M16EBLL-70BLI

Mfr.:

ISSI

Description:

SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS

Datasheet:

IS66WVE1M16EBLL-70BLI Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
RoHS:
Memory Size:	16 Mbit
Organisation:	1 M x 16
Access Time:	70 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.7 V
Supply Current - Max:	30 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	TFBGA-48
Brand:	ISSI
Memory Type:	SDR
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS66WVE1M16EBLL
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage
Type:	Asynchronous

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Datasheet

IS66WVE1M16EBLL-70BLI Datasheet (PDF)

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Compliance Codes

TARIC:: 8542324500
CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320002
JPHTS:: 854232021
KRHTS:: 8542321010
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

FEATURED PRODUCTS

ISSI

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Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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QuadRAM Devices

Contain 8Mb/16Mb/32Mb pseudo-static Random Access Memory (RAM) using a self-refresh DRAM array.

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Octal Memory

Portfolio of high-speed, low pin count memory products that utilize the JEDEC xSPI interface.

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IS62WVS Serial SRAMs

Fabricated using high-performance CMOS technology to offer 20MHz clock rate and 4µA standby current.

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Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

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In Stock: 480

Stock:: 480 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,54 €	6,54 €
	6,08 €	60,80 €
	5,90 €	147,50 €
	5,62 €	281,00 €
	5,49 €	549,00 €

IS66WVE1M16EBLL-70BLI

Mfr.: ISSI

Description: SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS

Specifications

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Datasheet

Environmental Documents

Product & Trade Compliance

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Pseudo SRAM/CellularRAM

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Mfr.:

ISSI

Description:

SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS

FEATURED PRODUCTS

ISSI