GCMX010A120B3B1P

SemiQ
148-GCMX010A120B3B1P
GCMX010A120B3B1P

Mfr.:

Description:
MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
79,17 € 79,17 €
65,88 € 658,80 €
62,39 € 6.239,00 €
Full Reel (Order in multiples of 40)
65,88 € 2.635,20 €
1.000 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
N-Channel
1.2 kV
173 A
9 mOhms
- 5 V, + 20 V
1.8 V
- 40 C
+ 175 C
577 W
GCMX
Reel
Cut Tape
Brand: SemiQ
Fall Time: 28 ns
Product Type: MOSFET Modules
Rise Time: 17 ns
Factory Pack Quantity: 40
Subcategory: Discrete and Power Modules
Type: Half-Bridge
Typical Turn-Off Delay Time: 86 ns
Typical Turn-On Delay Time: 43 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.