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FDME1034CZT

Name: onsemi FDME1034CZT
Brand: onsemi
SKU: 512-FDME1034CZT
Price: 0.91 EUR
Availability: InStock

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See Product Specifications

Mouser No:

512-FDME1034CZT

Mfr. No:

FDME1034CZT

Mfr.:

onsemi

Description:

MOSFETs 20V Complementary PowerTrench

Datasheet:

FDME1034CZT Datasheet

ECAD Model:

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More Information

Learn more about onsemi FDME1034CZT

In Stock: 2.484

Stock:: 2.484

Can Dispatch Immediately

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On Order:: 5.000

Expected 1/8/2027
Factory Lead Time:: 25

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,912 €	0,91 €
	0,569 €	5,69 €
	0,373 €	37,30 €
	0,288 €	144,00 €
	0,238 €	238,00 €
Full Reel (Order in multiples of 5000)
	0,212 €	1.060,00 €
	0,194 €	1.940,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Product Type:	MOSFETs
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Series:	FDME1034CZT
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Channel Mode:	Enhancement
Configuration:	Dual
Fall Time:	1.7 ns, 16 ns
Forward Transconductance - Min:	9 S, 7 S
Id - Continuous Drain Current:	3.4 A
Number of Channels:	2 Channel
Package/Case:	UMLP-6
Pd - Power Dissipation:	1.3 W
Qg - Gate Charge:	3 nC, 5.5 nC
Rds On - Drain-Source Resistance:	66 mOhms, 142 mOhms
Rise Time:	2 ns, 4.8 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel, P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	15 ns, 33 ns
Typical Turn-On Delay Time:	4.5 ns, 4.7 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	700 mV, 600 mV
Unit Weight:	25,200 mg

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Datasheet

FDME1034CZT Datasheet

Models

FDME1034CZT Symbol & Footprint by SnapMagic

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8542310399
ECCN:: EAR99

FDME10xx PowerTrench® MOSFETs

onsemi FDME10xx PowerTrench® MOSFETs are designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. The FDME1023PZT features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. The FDME1024NZT is a dual N-Channel device with low on-state resistance for minimum conduction losses. The FDME1034CZT is a complementary PowerTrench device with an independent N-Channel and P-Channel MOSFET with low on-state resistance. The FDME1034CZT is minimized to allow high frequency switching directly from the controlling device.