DMN53D0LDW-7

Diodes Incorporated
621-DMN53D0LDW-7
DMN53D0LDW-7

Mfr.:

Description:
MOSFETs N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs

Datasheet:
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Learn more about Diodes Incorporated DMN53D0LDW-7

In Stock: 3.664

Stock:
3.664
Can Dispatch Immediately
On Order:
51.000
Expected 4/17/2026
27.000
Expected 6/15/2026
Factory Lead Time:
24
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,241 € 0,24 €
0,149 € 1,49 €
0,093 € 9,30 €
0,084 € 42,00 €
0,053 € 53,00 €
Full Reel (Order in multiples of 3000)
0,047 € 141,00 €
0,044 € 264,00 €
0,036 € 324,00 €
0,034 € 816,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
DMN53D0LDW-13
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
0,26 €
Min:
1

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-363-6
N-Channel
2 Channel
50 V
360 mA
1.6 Ohms
- 20 V, 20 V
800 mV
600 pC
- 55 C
+ 150 C
310 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Dual
Fall Time: 11 ns, 11 ns
Product Type: MOSFETs
Rise Time: 2.5 ns, 2.5 ns
Series: DMN53
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 19 ns, 19 ns
Typical Turn-On Delay Time: 2.7 ns, 2.7 ns
Unit Weight: 7,500 mg
Products found:
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Attributes selected: 0

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

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