DF2B5M4ASL,L3F

Toshiba
757-DF2B5M4ASLL3F
DF2B5M4ASL,L3F

Mfr.:

Description:
ESD Protection Diodes / TVS Diodes Bi-Dir ESD 2A; 3.6V SOD-962 (SL2)

Datasheet:
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Learn more about Toshiba DF2B5M4ASL,L3F

In Stock: 12.540

Stock:
12.540 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 10000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,198 € 0,20 €
0,13 € 1,30 €
0,058 € 5,80 €
0,054 € 27,00 €
0,05 € 50,00 €
0,049 € 245,00 €
Full Reel (Order in multiples of 10000)
0,046 € 460,00 €
0,042 € 840,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: ESD Protection Diodes / TVS Diodes
RoHS:  
Bidirectional
1 Channel
3.6 V
SMD/SMT
20 V
5 V
SOD-962-2
2 A
30 W
0.15 pF
16 kV
16 kV
- 55 C
+ 150 C
Reel
Cut Tape
MouseReel
Brand: Toshiba
Operating Supply Voltage: 3.6 V
Product: ESD Suppressors
Factory Pack Quantity: 10000
Subcategory: ESD Protection Diodes / TVS Diodes
Unit Weight: 0,200 mg
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Attributes selected: 0

TARIC:
8541100000
CNHTS:
8541590000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100199
BRHTS:
85411029
ECCN:
EAR99

Next-Generation ESD Protection Diodes

Toshiba Next-Generation ESD Protection Diodes are used for power supply circuits in mobile devices such as smartphones and wearable devices. A choice of operating voltages (3.6V, 5.5V, 12.6V) and packages (SOD962, SL2, SOD963, CST2C, SOT553, USC, and DFN10) provides flexible options for realizing ESD protection against static electricity and noise in various designs.

DF2BxM4ASL ESD Protection Diodes

Toshiba DF2BxM4ASL ESD Protection Diodes protect semiconductor devices like mobile device interfaces and other applications against static electricity and noise. These ESD protection diodes utilize snapback characteristics, providing low dynamic resistance and superior protective performance. The DF2BxM4ASL diodes optimum the high-speed signal application for low capacitance performance. These ESD protection diodes are stored at -55°C to 150°C. The Toshiba DF2BxM4ASL diodes function at 150°C junction temperature, 30W peak pulse power,  and 2A peak pulse current. Typical applications include smartphones, tablets, notebook PCs, and desktop PCs.

DF2Bx ESD Protection Diodes

Toshiba DF2Bx ESD Protection Diodes are designed to protect semiconductor devices used in mobile device interfaces and other applications against static electricity and noise. These diodes utilize snapback characteristics to provide low dynamic resistance and superior protective performance. The DF2Bx ESD protection diodes are suitable for use with a 3.3V/5V signal line. These didoes come in a compact package that is suitable for use in high-density board layouts such as on mobile devices. Typical applications include smartphones, tablets, notebook PCs, and desktop PCs.

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