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AFGH4L25T120RWD

Name: onsemi AFGH4L25T120RWD
Brand: onsemi
SKU: 863-AFGH4L25T120RWD
Price: 8.14 EUR
Availability: InStock

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Mouser No:

863-AFGH4L25T120RWD

Mfr. No:

AFGH4L25T120RWD

Mfr.:

onsemi

Description:

IGBTs FS7 1200V 25A SCR IGBT TO247 4L

Lifecycle:

New At Mouser

Datasheet:

AFGH4L25T120RWD Datasheet

ECAD Model:

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Learn more about onsemi AFGH4L25T120RWD

In Stock: 445

Stock:: 445 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,14 €	8,14 €
	6,05 €	60,50 €
	5,04 €	604,80 €
	4,20 €	2.142,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.37 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	416 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	AFGH4L25T120RWD
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current Ic Max:	25 A
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors

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Datasheet

AFGH4L25T120RWD Datasheet

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.