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T2G4005528-FS

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See Product Specifications

Mouser No:

772-T2G4005528-FS

Mfr. No:

T2G4005528-FS

Mfr.:

Qorvo

Description:

GaN FETs DC-3.5GHz 55 Watt 28V GaN Flangeless

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

T2G4005528-FS Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo T2G4005528-FS

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Package/Case:	NI-360
Transistor Polarity:	N-Channel
Brand:	Qorvo
Gain:	16 dB
Maximum Operating Frequency:	3.5 GHz
Moisture Sensitive:	Yes
Output Power:	55 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	T2G4005528
Factory Pack Quantity:	100
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Type:	GaN SiC HEMT
Part # Aliases:	T2G4005528 1099993

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Datasheet

T2G4005528-FS Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542319000
CAHTS:: 8542330000
USHTS:: 8542390090
JPHTS:: 8542330996
KRHTS:: 8532331000
MXHTS:: 8542330201
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.