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UF3SC120009K4S

Name: onsemi UF3SC120009K4S
Brand: onsemi
SKU: 431-UF3SC120009K4S
Price: 56.51 EUR
Availability: InStock

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Mouser No:

431-UF3SC120009K4S

Mfr. No:

UF3SC120009K4S

Mfr.:

onsemi

Description:

SiC MOSFETs 1200V/9MOSICFETG3TO247-4

Datasheet:

UF3SC120009K4S Datasheet

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In Stock: 515

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	56,51 €	56,51 €
	43,49 €	434,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	234 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	789 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	UF3SC
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	6 g

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Datasheet

UF3SC120009K4S Datasheet

Models

UF3SC120009K4S SPICE (Text)

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R_DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.