It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

NTP082N65S3F

Name: onsemi NTP082N65S3F
Brand: onsemi
SKU: 863-NTP082N65S3F
Price: 7.56 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTP082N65S3F

Mfr. No:

NTP082N65S3F

Mfr.:

onsemi

Description:

MOSFETs SF3 FRFET 650V 82MOHM

Datasheet:

NTP082N65S3F Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTP082N65S3F

In Stock: 2.279

Stock:: 2.279 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2279 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,56 €	7,56 €
	4,14 €	41,40 €
	3,81 €	381,00 €
	3,47 €	1.735,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	70 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	81 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	313 W
Channel Mode:	Enhancement
Tradename:	SuperFET III
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	27 ns
Series:	NTP082N65S3F
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	79 ns
Typical Turn-On Delay Time:	27 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTP082N65S3F Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.