NCD5700DR2G

onsemi
863-NCD5700DR2G
NCD5700DR2G

Mfr.:

Description:
Gate Drivers HIGH CURRENT IGBT GATE DR

Datasheet:
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Learn more about onsemi NCD5700DR2G

In Stock: 2.576

Stock:
2.576 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
3,04 € 3,04 €
2,29 € 22,90 €
2,11 € 52,75 €
1,89 € 189,00 €
1,72 € 430,00 €
1,64 € 820,00 €
1,59 € 1.590,00 €
Full Reel (Order in multiples of 2500)
1,56 € 3.900,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
SMD/SMT
SOIC-16
1 Driver
1 Output
7.8 A
0 V
5 V
Inverting, Non-Inverting
18 ns
19 ns
- 40 C
+ 125 C
NCD5700
Reel
Cut Tape
MouseReel
Brand: onsemi
Features: DESAT Protection, Tight UVLO Thresholds
Maximum Turn-Off Delay Time: 63 ns
Maximum Turn-On Delay Time: 56 ns
Operating Supply Current: 900 uA
Output Voltage: 800 mV, 14.1 V
Pd - Power Dissipation: 900 mW
Product Type: Gate Drivers
Shutdown: Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

CNHTS:
8542399000
CAHTS:
8542310000
USHTS:
8542390090
MXHTS:
8542310302
ECCN:
EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCD5700 and NCD5701 IGBT Gate Drivers

onsemi NCD5700 and NCD5701 Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components. Device protection features of the NCD5700 and NCD5701 Gate Drivers include accurate Under-Voltage Lockout (UVLO), Desaturation Protection (DESAT), and Active Low FAULT output.

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