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TK8A50D(STA4,Q,M)

Name: Toshiba TK8A50D(STA4,Q,M)
Brand: Toshiba
SKU: 757-TK8A50DSTA4QM
Price: 1.78 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK8A50DSTA4QM

Mfr. No:

TK8A50D(STA4,Q,M)

Mfr.:

Toshiba

Description:

MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm

Datasheet:

TK8A50D(STA4,Q,M) Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba TK8A50D(STA4,Q,M)

In Stock: 337

Stock:: 337

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On Order:: 250

Expected 3/16/2026
Factory Lead Time:: 32

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,78 €	1,78 €
	0,903 €	9,03 €
	0,877 €	87,70 €
	0,691 €	345,50 €
	0,545 €	545,00 €
	0,543 €	1.357,50 €
	0,541 €	2.705,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	850 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	1 S
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	TK8A50D
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	2 g

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Datasheet

TK8A50D(STA4,Q,M) Datasheet (PDF)

Application Notes

Models

Product Catalogs

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TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.