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SSM6N815R,LF

Name: Toshiba SSM6N815R,LF
Brand: Toshiba
SKU: 757-SSM6N815RLF
Price: 0.61 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6N815RLF

Mfr. No:

SSM6N815R,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=2A VDSS=100V

Datasheet:

SSM6N815R,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6N815R,LF

In Stock: 17.992

Stock:: 17.992

Can Dispatch Immediately

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On Order:: 61.000

4.000

Pending

21.000

Expected 4/10/2026

36.000

Expected 5/11/2026
Factory Lead Time:: 22

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,619 €	0,62 €
	0,379 €	3,79 €
	0,244 €	24,40 €
	0,186 €	93,00 €
	0,167 €	167,00 €
Full Reel (Order in multiples of 3000)
	0,139 €	417,00 €
	0,128 €	768,00 €
	0,111 €	999,00 €
	0,108 €	2.592,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSOP-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	84 mOhms, 84 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	3.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.4 W
Channel Mode:	Enhancement
Tradename:	U-MOSVIII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Forward Transconductance - Min:	4.8 S, 4.8 S
Product Type:	MOSFETs
Series:	SSM6N815
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	21 ns, 21 ns
Typical Turn-On Delay Time:	7.5 ns, 7.5 ns
Unit Weight:	20 mg

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Filter Document:

Datasheet

SSM6N815R,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

MOSFETs for Industrial & Lighting Applications

Toshiba 60V and 100V Power MOSFETs for Industrial and Lighting Applications include the 60V SSM3K341 and the 100V SSM3K361 families. These MOSFETs feature industry-leading low on-resistance and are suited to load switching in television and industrial lighting. The devices are also good candidates for industrial automation systems that require low to medium power.

SSM6x N- & P-Channel MOSFETs

Toshiba SSM6x N- and P-Channel MOSFETs with high-speed switching operate as both power management and analog switches. These MOSFETs provide very low on-resistance (as low as 1.1mΩ to a 115mΩ maximum) for different gate-to-source voltage ranges. The SSM6x MOSFETs are available in small profile packages with surface mount compatibility. These MOSFETs offer a low drain to source on-resistance, operate as DC-to-DC converters, and drive a 1.2V to 4.5V gate voltage. The Toshiba SSM6x MOSFETs deliver less drain power dissipation (up to 150mW), producing less heat while operating within a 12V to 100V input voltage range.