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2SC4116-GR,LF

Name: Toshiba 2SC4116-GR,LF
Brand: Toshiba
SKU: 757-2SC4116-GRLF
Price: 0.14 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-2SC4116-GRLF

Mfr. No:

2SC4116-GR,LF

Mfr.:

Toshiba

Description:

Bipolar Transistors - BJT USM PLN TRANSISTOR Pd=100mW F=80MHz

Datasheet:

2SC4116-GR,LF Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1.027

Stock:: 1.027

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 93.000

Expected 9/4/2026

63.000

Expected 9/11/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,146 €	0,15 €
	0,088 €	0,88 €
	0,054 €	5,40 €
	0,04 €	20,00 €
	0,034 €	34,00 €
Full Reel (Order in multiples of 3000)
	0,028 €	84,00 €
	0,025 €	150,00 €
	0,021 €	189,00 €
	0,019 €	456,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	150 mA
Collector- Emitter Voltage VCEO Max:	50 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	100 mV
Pd - Power Dissipation:	100 mW
Gain Bandwidth Product fT:	80 MHz
Maximum Operating Temperature:	+ 125 C
Qualification:	AEC-Q101
Series:	2SC4116
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Continuous Collector Current:	150 mA
DC Collector/Base Gain hFE Min:	70
DC Current Gain hFE Max:	700
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	6,200 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

2SC4116-GR,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Bipolar Transistors

Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.