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UCC23513BQDWYQ1

Name: Texas Instruments UCC23513BQDWYQ1
Brand: Texas Instruments
SKU: 595-UCC23513BQDWYQ1
Price: 4.08 EUR
Availability: InStock

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Mouser No:

595-UCC23513BQDWYQ1

Mfr. No:

UCC23513BQDWYQ1

Mfr.:

Texas Instruments

Description:

Optically Isolated Gate Drivers Automotive 5.7kVrms 4A/5A single-channel UCC23513BQDWYRQ1

Datasheet:

UCC23513BQDWYQ1 Datasheet

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In Stock: 3.879

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,08 €	4,08 €
	2,72 €	27,20 €
	2,53 €	63,25 €
	2,22 €	222,00 €
	1,74 €	522,00 €
	1,67 €	835,00 €
	1,57 €	1.570,00 €
	1,54 €	3.850,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Optically Isolated Gate Drivers
RoHS:
Series:	UCC23513
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	750 mW
Propagation Delay - Max:	105 ns
Rise Time:	28 ns
Fall Time:	25 ns
Packaging:	Tube
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Operating Supply Current:	50 mA
Output Current:	5 A
Product:	Isolated Gate Drivers
Product Type:	Optically Isolated Gate Drivers
Shutdown:	No Shutdown
Factory Pack Quantity:	100
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	30 V
Supply Voltage - Min:	15 V
Technology:	Si
Type:	High-Side, Low-Side

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Datasheet

UCC23513BQDWYQ1 Datasheet

PCN

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CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

UCC23513/UCC23513-Q1 Isolated Gate Driver

Texas Instruments UCC23513/UCC23513-Q1 Isolated Gate Driver is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs, and SiC MOSFETs. This device has a 4.5A source, a 5.3A sink peak output current, and a 5.7KVRMS reinforced isolation rating. The high supply voltage range of 33V allows the use of bipolar supplies for effectively driving IGBTs and SiC power FETs. UCC23513/UCC23513-Q1 can drive both low-side and high-side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard optocoupler-based gate drivers while maintaining pin-to-pin compatibility in schematic and layout design.