LMG3526R030RQST

Texas Instruments
595-LMG3526R030RQST
LMG3526R030RQST

Mfr.:

Description:
Gate Drivers 650-V 30-m? GaN FET with integrated driv

ECAD Model:
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In Stock: 221

Stock:
221 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
27,25 € 27,25 €
23,97 € 239,70 €
22,71 € 567,75 €
21,09 € 2.109,00 €
Full Reel (Order in multiples of 250)
19,92 € 4.980,00 €
19,75 € 9.875,00 €
1.000 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
SMD/SMT
2.8 ns
22 ns
- 40 C
+ 125 C
LMG3526R030
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 35 mOhms
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
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Attributes selected: 0

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Compliance Codes
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

LMG3526R030 GaN FET with Integrated Driver

Texas Instruments LMG3526R030 GaN FET with Integrated Driver comes with protections and targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R030 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.