LMG3411R070RWHR

Texas Instruments
595-LMG3411R070RWHR
LMG3411R070RWHR

Mfr.:

Description:
Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHT

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2000)
7,79 € 15.580,00 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
19,57 €
Min:
1

Similar Product

Texas Instruments LMG3411R070RWHT
Texas Instruments
Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHR

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
QFN-32
1 Driver
1 Output
9.5 V
18 V
15 ns
4.2 ns
- 40 C
+ 125 C
LMG3411R070
Reel
Brand: Texas Instruments
Maximum Turn-Off Delay Time: 10 ns
Maximum Turn-On Delay Time: 12 ns
Moisture Sensitive: Yes
Operating Supply Current: 43 mA
Output Voltage: 5 V
Product Type: Gate Drivers
Propagation Delay - Max: 36 ns
Rds On - Drain-Source Resistance: 70 mOhms
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: GaN
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Attributes selected: 0

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Compliance Codes
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Not available
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

LMG3410R070 600V 70mΩ GaN Power Stage

Texas Instruments LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery, reducing switching losses by as much as 80%, and low switch node ringing to decrease EMI.