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TSM60NB190CM2 RNG

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See Product Specifications

Mouser No:

821-TSM60NB190CM2RNG

Mfr. No:

TSM60NB190CM2 RNG

Mfr.:

Taiwan Semiconductor

Lifecycle:

Obsolete

Datasheet:

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	170 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	31 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150.6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Single
Fall Time:	21 ns
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	21 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	95 ns
Typical Turn-On Delay Time:	36 ns
Part # Aliases:	TSM60NB190CM2
Unit Weight:	4 g