BSS123W RFG

Taiwan Semiconductor
821-BSS123W
BSS123W RFG

Mfr.:

Description:
MOSFETs 100V, 0.16A, Single N-Channel Power MOSFET

Datasheet:
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In Stock: 8.325

Stock:
8.325 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,198 € 0,20 €
0,12 € 1,20 €
0,075 € 7,50 €
0,055 € 27,50 €
0,048 € 48,00 €
Full Reel (Order in multiples of 3000)
0,047 € 141,00 €
0,042 € 252,00 €
0,029 € 261,00 €
0,028 € 672,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-323-3
N-Channel
1 Channel
100 V
160 mA
5 Ohms
- 20 V, 20 V
2.5 V
2 nC
- 55 C
+ 150 C
298 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Taiwan Semiconductor
Configuration: Single
Fall Time: 51 ns
Forward Transconductance - Min: 0.5 S
Product Type: MOSFETs
Rise Time: 11 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channe
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 5 ns
Part # Aliases: BSS123W
Unit Weight: 6 mg
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Attributes selected: 0

Datasheet

Models

SPICE Models

Compliance Codes
TARIC:
8541290000
CNHTS:
8541210000
USHTS:
8541210095
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

BSSx N-Channel & P-Channel Power MOSFETs

Taiwan Semiconductor BSSx N-Channel and P-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. The BSSx power MOSFETs operate from -55°C to 150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.

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