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STW18NM80

Name: STMicroelectronics STW18NM80
Brand: STMicroelectronics
SKU: 511-STW18NM80
Price: 8.07 EUR
Availability: InStock

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Mouser No:

511-STW18NM80

Mfr. No:

STW18NM80

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V MDMesh

Complete Your Design

Datasheet:

STW18NM80 Datasheet (PDF)

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In Stock: 652

Stock:: 652 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,07 €	8,07 €
	5,40 €	54,00 €
	4,45 €	445,00 €
	3,97 €	2.382,00 €
	3,71 €	4.452,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	295 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	50 ns
Product Type:	MOSFETs
Rise Time:	28 ns
Series:	STW18NM80
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	96 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	6 g

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Datasheet

STW18NM80 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Italy
Assembly Country of Origin:: Italy
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.