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STS8DN6LF6AG

Name: STMicroelectronics STS8DN6LF6AG
Brand: STMicroelectronics
SKU: 511-STS8DN6LF6AG
Price: 1.64 EUR
Availability: InStock

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See Product Specifications

Mouser No:

511-STS8DN6LF6AG

Mfr. No:

STS8DN6LF6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STS8DN6LF6AG Datasheet (PDF)

ECAD Model:

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In Stock: 3.109

Stock:: 3.109 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 3109 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,64 €	1,64 €
	1,05 €	10,50 €
	0,699 €	69,90 €
	0,553 €	276,50 €
	0,506 €	506,00 €
Full Reel (Order in multiples of 2500)
	0,454 €	1.135,00 €
	0,44 €	2.200,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	21 mOhms, 21 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	27 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.2 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Dual
Fall Time:	7 ns, 7 ns
Product Type:	MOSFETs
Rise Time:	20 ns, 20 ns
Series:	STS8DN6LF6AG
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	56 ns, 56 ns
Typical Turn-On Delay Time:	9.6 ns, 9.6 ns
Unit Weight:	750 mg

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Filter Document:

Datasheet

STS8DN6LF6AG Datasheet (PDF)

EOL

Product Discontinuation Notification 2026-4-28 (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.