STP46NF30

STMicroelectronics
511-STP46NF30
STP46NF30

Mfr.:

Description:
MOSFETs N-Ch 300V 0.063Ohm 42A pwr MOSFET
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Tube
STP46NF30
- 55 C
+ 175 C
AEC-Q100
Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Fall Time: 46 ns
Id - Continuous Drain Current: 42 A
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package/Case: TO-220-3
Pd - Power Dissipation: 300 W
Product Type: MOSFETs
Qg - Gate Charge: 90 nC
Rds On - Drain-Source Resistance: 63 mOhms
Rise Time: 38 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: Si
Tradename: STripFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 25 ns
Vds - Drain-Source Breakdown Voltage: 300 V
Vgs - Gate-Source Voltage: - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541210000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412101
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET II™ Power MOSFETs

STMicroelectronics STripFET II™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a gate structure. The resulting STripFET™ Power MOSFET exhibits a high current and low RDS(on). These Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density. These STripFET™ Power MOSFETs are a well-established planar technology for high-efficiency, low-voltage systems.

In Stock: 90

Stock:
90
Can Dispatch Immediately
On Order:
5.000
Expected 3/19/2027
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,89 € 3,89 €
2,31 € 23,10 €
1,75 € 175,00 €
1,44 € 720,00 €
1,39 € 1.390,00 €

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