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STO67N60M6

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See Product Specifications

Mouser No:

511-STO67N60M6

Mfr. No:

STO67N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 48 mOhm typ., 34 A MDmesh M6 Power MOSFET

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

STO67N60M6 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	54 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	72.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Product Type:	MOSFETs
Series:	MDmesh M6
Factory Pack Quantity:	1800
Subcategory:	Transistors
Unit Weight:	76 mg

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Filter Document:

Datasheet

STO67N60M6 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-11-4 (PDF)

PCN

Technical Resources

TO-LL and MDmesh M6 the latest breakthrough in high-level telecom SMPS (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Q_g), very low recovery charge (Q_rr), low recovery time (t_rr), and an excellent R_DS(on) per area.