STL9P3LLH6

STMicroelectronics
511-STL9P3LLH6
STL9P3LLH6

Mfr.:

Description:
MOSFETs P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3

ECAD Model:
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In Stock: 62.626

Stock:
62.626 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,46 € 1,46 €
0,929 € 9,29 €
0,617 € 61,70 €
0,485 € 242,50 €
0,443 € 443,00 €
Full Reel (Order in multiples of 3000)
0,388 € 1.164,00 €
0,376 € 2.256,00 €
0,375 € 3.375,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerFLAT-3.3x3.3-8
P-Channel
1 Channel
30 V
9 A
12 mOhms
- 20 V, 20 V
1 V
24 nC
- 55 C
+ 150 C
3 W
Enhancement
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 18 ns
Product Type: MOSFETs
Rise Time: 93 ns
Series: STL9P3LLH6
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 13.2 ns
Unit Weight: 20 mg
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Singapore
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STL9P3LLH6 P-channel Power MOSFET

STMicroelectronics STL9P3LLH6 P-channel MOSFET is a -30V, 12mΩ type MOSFET developed using STripFET™ H6 technology with a new trench gate structure. This MOSFET has very low gate charge, power loss, and high avalanche ruggedness. STL9P3LLH6 MOSFET is provided in a 3.3x3.3 package and exhibits very low RDS(on) for all packages. These MOSFETs are used for switching applications.